HBT and field effect transistor integration

Details HBT and field effect transistor integration HBT and field effect transistor integration

2011-04-12

2011-04-12

Menz, Laura M (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having schottky gate

C438S172000, C438S314000

Reexamination Certificate

active

07923318

ABSTRACT:
Methods and systems for fabricating an integrated BiFET using two separate growth procedures are disclosed. Performance of the method fabricates the FET portion of the BIFET in a first fabrication environment. Performance of the method fabricates the HBT portion of the BiFET in a second fabrication environment. By separating the fabrication of the FET portion and the HBT portion in two or more separate reactors, the optimum device performance can be achieved for both devices.

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Dunn, J. et al., “Trends in Silicon Germanium BiCMOS Integration and Reliability,”IEEE 38th Annual International Reliability Physics Symposium, pp. 237-242 (2000).
Ehwald, K.E. et al., “Modular Integration of High-Performance SiGe:C HBTs in a Deep Submicron, Epi-Free CMOS Process,”IEDM Technical Digest, pp. 561-564 (1999).
St. Onge, S.A. et al., “A 0.24 μm SiGe BiCMOS Mixed-Signal RF Production Technology Featuring a 47 GHz ftHBT and 0.18 μm LeffCMOS,”Proceedings of the 1999 Bipolar/BicMOS Circuits and Technology Meeting, pp. 117-120 (1999).
Invitation to Pay Additional Fees for Application No. PCT/US2008/001614, dated Jun. 18, 2008.
Hungarian Written Opinion for Application No. 2009051608, dated Aug. 19, 2010.

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