Hatted polysilicon gate structure for improving salicide...

Details Hatted polysilicon gate structure for improving salicide... Hatted polysilicon gate structure for improving salicide...

2005-04-26

2005-04-26

Zarabian, Amir (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having schottky gate

C438S574000, C438S578000, C438S579000, C438S666000

Reexamination Certificate

active

06884669

ABSTRACT:
Alternate methods of forming low resistance “hatted” polysilicon gate elements are provided that increase the effective area in the polysilicon gate for silicide grain growth during silicide formation. The expanded top portion helps to prevent silicide agglomeration in the silicide regions, thereby maintaining or reducing electrode resistance, improving high-frequency performance, and reducing gate delay in sub micron FET ULSI devices, without increasing the underlying active channel length.

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