Hardmask with high selectivity for Ir barriers for...

Details Hardmask with high selectivity for Ir barriers for... Hardmask with high selectivity for Ir barriers for...

2006-05-16

2006-05-16

Flynn, Nathan J. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S288000, C257S213000, C438S003000

Reexamination Certificate

active

07045837

ABSTRACT:
The present invention provides a ferroelectric device relatively free of fences by using a hardmask having high etching selectivity relative to an underlying barrier layer. The present invention also includes a method for suppressing the fences clinging to the sidewalls of ferroelectric devices. Additionally, the present invention provides a ferroelectric device having a hardmask relatively thin compared to an underlying barrier layer when compared to prior art devices.

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patent: 2001/0022372 (2001-09-01), Kanaya et al.
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patent: 2003/0124791 (2003-07-01), Summerfelt et al.
patent: 2001036026 (2001-02-01), None
International Search Report, Mailing date Jul. 26, 2004.

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