Hard mask technique in forming a plug

Semiconductor device manufacturing: process – Making passive device – Trench capacitor

Reexamination Certificate

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C257SE21396

Reexamination Certificate

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07615460

ABSTRACT:
A method for manufacturing a semiconductor device includes the steps of forming a conductive hard mask coupled to the semiconductor substrate via discharge plugs on a thick insulating film, selectively etching the thick insulating film by using the conductive hard mask to form cylindrical holes in the thick insulating film. The resultant cylindrical holes are free form bowing structure.

REFERENCES:
patent: 6197653 (2001-03-01), Khamankar et al.
patent: 6294426 (2001-09-01), Tu et al.
patent: 7112504 (2006-09-01), Hsin et al.
patent: 7130182 (2006-10-01), Balster et al.
patent: 2002/0151152 (2002-10-01), Shimamoto et al.
patent: 11-354499 (1999-12-01), None

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