Hard mask layer stack and a method of patterning

Details Hard mask layer stack and a method of patterning Hard mask layer stack and a method of patterning

2006-03-15

2010-02-16

Coleman, W. David (Department: 2813)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S736000, C257SE21035

Reexamination Certificate

active

07662721

ABSTRACT:
A hard mask layer stack for patterning a layer to be patterned includes a carbon layer disposed on top of the layer to be patterned, a first layer of a material selected from the group of SiO2and SiON disposed on top of the carbon layer and a silicon layer disposed on top of the first layer. A method of patterning a layer to be patterned includes providing the above described hard mask layer stack on the layer to be patterned and patterning the silicon hard mask layer in accordance with a pattern to be formed in the layer that has to be patterned.

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