Hard mask etch for gate polyetch

Details Hard mask etch for gate polyetch Hard mask etch for gate polyetch

2007-01-16

2007-01-16

Lindsay, Jr., Walter (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C438S721000, C438S791000, C438S952000, C257SE21206, C257SE21029, C257SE21038

Reexamination Certificate

active

10157192

ABSTRACT:
A transistor gate structure that is free from notches is formed by using a hard mask. The hard mask has a bilayer structure of a BARC (bottom antireflective coating) over a silicon dioxide layer. A photoresist layer is formed over a portion corresponding to the gates. A first etch forms the gate structure. Following removal of the photoresist, a second etch completely removes the BARC. The silicon dioxide layer can be removed by a subsequent wet etch with HF.

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