Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device
Reexamination Certificate
2008-07-15
2008-07-15
McKane, Joseph (Department: 1626)
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Making electrical device
C564S311000, C564S265000, C564S253000, C562S440000, C562S100000, C562S043000
Reexamination Certificate
active
07399577
ABSTRACT:
Compounds of the formula (I) or (II) wherein R1is C1-C10haloalkylsulfonyl, halobenzenesulfonyl, C2- C10haloalkanoyl, halobenzoyl; R2is halogen or C1-C10haloalkyl; Arl is phenyl, biphenylyl, fluorenyl, naphthyl, anthracyl, phenanthryl, or heteroaryl, all of which are optionally substituted; Ar′1is for example phenylene, naphthylene, diphonylene, heteroarylene, oxydiphenylene, phenyleneD-D1-D-phenylene or —Ar′1-A1—Y1-A1—Ar′1—; wherein these radicals optionally are substituted; Ae′, is phenylene, naphthylene, anthracylene, phenanthrylene, or heteroarylene, all optionally substituted; A, is for example a direct bond, —0—, —S—, or —NR6—; Y, inter alia is C1-C18alkylene; X is halogen; D is for example —0—, —S— or —NR6—; D, inter alia is C1-C18alkylene; are particularly suitable as photolatent acids in ArF resist technology.
REFERENCES:
patent: 4540598 (1985-09-01), Berner et al.
patent: 4566901 (1986-01-01), Martin et al.
patent: 4736055 (1988-04-01), Dietliker et al.
patent: 5627011 (1997-05-01), Münzel et al.
patent: 5714625 (1998-02-01), Hada et al.
patent: 5759740 (1998-06-01), Münzel et al.
patent: 6261738 (2001-07-01), Asakura et al.
patent: 6512020 (2003-01-01), Asakura et al.
patent: 6986981 (2006-01-01), Yamato et al.
patent: 2001/0037037 (2001-11-01), Dietliker et al.
patent: 2004/0002007 (2004-01-01), Hitoshi et al.
patent: 2004/0170924 (2004-09-01), Kunimoto et al.
patent: 2004/0209186 (2004-10-01), Matsumoto et al.
patent: 2005/0153244 (2005-07-01), Matsumoto et al.
patent: 2002-303979 (2002-10-01), None
patent: 2002303979 (2002-10-01), None
Derwent Abstract 87-286243/41 for EP 0241423, Oct. 1987.
Chem. Abstract 97:144503 for Huaxue Xuebao, (1981), vol. 39 (7-8-9), pp. 897-902.
Chem. Abstract 78:97752 for Izv. Akad. Nauk SSSR, Ser. Khim., (1972), (12), pp. 2737-2741.
Asakura Toshikage
Hintermann Tobias
Matsumoto Akira
Murer Peter
Yamato Hitoshi
Chu Yong
Ciba Specialty Chemicals Corporation
Loggins Shiela A.
McKane Joseph
LandOfFree
Halogenated oxime derivatives and the use thereof does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Halogenated oxime derivatives and the use thereof, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Halogenated oxime derivatives and the use thereof will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2813441