Halogen-free amorphous carbon mask etch having high...

Details Halogen-free amorphous carbon mask etch having high... Halogen-free amorphous carbon mask etch having high...

2007-03-21

2010-10-05

Vinh, Lan (Department: 1713)

Etching a substrate: processes

Forming pattern using lift off technique

C216S037000, C216S058000, C216S067000, C216S089000, C438S706000, C438S710000, C438S712000, C438S745000

Reexamination Certificate

active

07807064

ABSTRACT:
In one embodiment of the present invention, a halogen-free plasma etch processes is used to define a feature in a multi-layered masking stack including an amorphous carbon layer. In a particular embodiment, oxygen (O2), nitrogen (N2), and carbon monoxide (CO) are utilized to etch the amorphous carbon layer to form a mask capable of producing sub-100 nm features in a substrate film having a reduced line edge roughness value. In another embodiment, the present invention employs an O2plasma pretreatment preceding the halogen-free amorphous carbon etch to first form an oxidized silicon region in a patterned photoresist layer to increase the selectivity of the amorphous carbon etch relative to a patterned photoresist layer containing unoxidized silicon.

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Jean Tsong-shin et al. Journal of Photopolymer Science and Technology, vol. 14, (2001), pp. 503-506.

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