Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-09-27
2005-09-27
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S347000, C257S344000, C257S316000, C257S324000, C438S286000, C438S524000, C438S302000, C438S217000, C438S162000, C438S289000
Reexamination Certificate
active
06949796
ABSTRACT:
A halo implant method for forming halo regions of at least first and second transistors formed on a same semiconductor substrate. The first transistor comprises a first gate region disposed between first and second semiconductor regions. The second transistor comprises a second gate region disposed between third and fourth semiconductor regions. The method comprises the steps of, in turn, halo-implanting each of the first, second, third, and fourth semiconductor regions, with the other three semiconductor regions being masked, in a projected direction which (i) is essentially perpendicular to the direction of the respective gate region and (ii) points from the halo-implanted semiconductor region to the respective gate region.
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Ellis-Monaghan John J.
Peterson Kirk D.
Zimmerman Jeffrey S.
Forde Remmon R.
Sabo William D.
Schmeiser Olsen & Watts
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