Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2009-08-08
2010-12-28
Pham, Hoai v (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S382000, C257SE27062
Reexamination Certificate
active
07859061
ABSTRACT:
Superior control of short-channel effects for an ultra-thin semiconductor-on-insulator field effect transistor (UTSOI-FET) is obtained by performing a halo implantation immediately after a gate reoxidation step. An offset is then formed and thereafter an extension implantation process is performed. This sequence of processing steps ensures that the halo implant is laterally separated from the extension implant by the width of the offset spacer. This construction produces equivalent or far superior short channel performance compared to conventional UTSOI-FETs. Additionally, the above processing steps permit the use of lower halo doses as compared to conventional processes.
REFERENCES:
patent: 6548875 (2003-04-01), Nishiyama
patent: 6746926 (2004-06-01), Yu
patent: 6914303 (2005-07-01), Doris et al.
patent: 7060546 (2006-06-01), Hsu et al.
Dokumaci Omer H.
Hergenrother John M.
Narasimha Shreesh
Sleight Jeffrey W.
Alexanian Vazken
International Business Machines - Corporation
Pham Hoai v
Scully , Scott, Murphy & Presser, P.C.
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