Half-tone type phase shift mask and method for fabrication there

Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask

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430311, 430396, G03F 900

Patent

active

055432557

ABSTRACT:
There is disclosed a half-tone type phase shift mask consisting of: a transparent substrate; a phase shift pattern capped with a half-tone type light-penetrating pattern, both patterns being provided with a window exposing a predetermined area of the transparent substrate therethrough and the half-tone type light penetrating pattern having a thickness so that it is penetrated by only 5 to 20% of an incident light; and an optically opaque pattern covering all areas of the transparent substrate except for the phase shift pattern capped with the half-tone type light-penetrating pattern and the window, wherein an incident light penetrates only through the window and the phase shift pattern capped with the half-tone type light-penetrating pattern. The half-tone type phase shift mask is capable of preventing light from penetrating undesired areas and thus capable of obtaining a photoresist pattern with a superior smooth profile.

REFERENCES:
patent: 5286581 (1994-02-01), Lee
patent: 5286584 (1994-02-01), Gemmink et al.

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