Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Reexamination Certificate
2006-01-17
2006-01-17
Everhart, Caridad M. (Department: 2891)
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
C438S785000, C075S245000, C204S298130
Reexamination Certificate
active
06986834
ABSTRACT:
Provided is a hafnium silicide target for forming a gate oxide film composed of HfSi0.82-0.98, wherein the oxygen content is 500 to 10000 ppm. Manufactured is a hafnium silicide target for forming a gate oxide film, wherein powder of the composition composed of HfSi0.82-0.98is synthesized, pulverized to be 100 mesh or less, and thereafter subject to hot pressing or hot isostatic pressing (HIP) at 1700° C. to 2120° C. and 150 to 2000 kgf/cm2. Thereby obtained is a hafnium silicide target, and the manufacturing method thereof, suitable for forming a HfSiO film and HfSiON film that may be used as a high dielectric gate insulation film, superior in embrittlement resistance, having a low generation of particles, and which is not likely to cause ignition of sintering powder or explosion of powder dust during the manufacturing process thereof.
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Irumata Shuichi
Suzuki Ryo
Everhart Caridad M.
Howson and Howson
Nikko Materials Co., Ltd.
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