H 2 plasma treatment

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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Details

C438S650000, C438S654000, C438S675000, C257SE21575, C257SE21576, C257SE21577

Reexamination Certificate

active

10634274

ABSTRACT:
Electronic devices are constructed by a method that includes forming a first conductive layer in an opening in a multilayer dielectric structure supported by a substrate, forming a core conductive layer on the first conductive layer, subjecting the core conductive layer to a H2plasma treatment, and depositing a capping adhesion/barrier layer on the core conductive layer after the H2plasma treatment. The multilayer dielectric structure provides an insulating layer for around the core conducting layer and at least one sacrificial layer for processing. The H2plasma treatment removes unwanted oxide from the surface region of the core conducting layer such that the interface between the core conducting layer and the capping adhesion/barrier is substantially free of oxides. In an embodiment, the core conducting layer is copper with a titanium nitride or zirconium capping adhesion/barrier layer.

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