Guidance system for low angle silicon ribbon growth

Details Guidance system for low angle silicon ribbon growth Guidance system for low angle silicon ribbon growth

1985-01-18

1986-07-08

Bernstein, Hiram H.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

C30B 1506

Patent

active

045991324

ABSTRACT:
In a low angle silicon sheet growth process, a puller mechanism advances a seed crystal and solidified ribbon from a cooled growth zone in a melt at a low angle with respect to the horizontal. The ribbon is supported on a ramp adjacent the puller mechanism. Variations in the vertical position of the ribbon with respect to the ramp are isolated from the growth end of the ribbon by (1) growing the ribbon so that it is extremely thin, preferably less than 0.7 mm, (2) maintaining a large growth zone, preferably one whose length is at least 5.0 cm, and (3) spacing the ramp from the growth zone by at least 15 cm.

REFERENCES:
patent: 4264407 (1981-04-01), Shudo et al.
patent: 4267010 (1981-05-01), Bates et al.
patent: 4289571 (1981-09-01), Jewett
patent: 4322263 (1982-03-01), Kudo et al.
patent: 4329195 (1982-05-01), Kudo

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