Guard ring structure for semiconductor devices and process for m

Details Guard ring structure for semiconductor devices and process for m Guard ring structure for semiconductor devices and process for m

1999-11-19

2000-10-03

Monin, Jr., Donald L.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257170, 257339, 257605, H01L 2976, H01L 2994

Patent

active

061277096

ABSTRACT:
A semiconductor device includes a guard ring in the termination area that is formed using the same processing steps that form the active area of the device and without requiring additional masking steps or a passivation layer. The guard ring is formed in an opening in the field oxide located in the termination area and is electrically connected to a polysilicon field plate that is located atop a portion of the field oxide region. The guard ring increases the rated voltage of the device without the introduction of a passivation layer.

REFERENCES:
patent: 5162883 (1992-11-01), Fujihira
patent: 5268586 (1993-12-01), Mukherjee et al.
patent: 5270566 (1993-12-01), Fujihara
patent: 5313088 (1994-05-01), Takahashi et al.
patent: 5583365 (1996-12-01), Villa et al.
patent: 5929485 (1999-07-01), Takahashi

Affiliated with

Also associated with

Rating

Guard ring structure for semiconductor devices and process for m does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Guard ring structure for semiconductor devices and process for m, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Guard ring structure for semiconductor devices and process for m will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-198399