Guard cell for etching

Details Guard cell for etching Guard cell for etching

1998-03-09

2000-05-09

Utech, Benjamin L.

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

438700, 438703, 438735, H01L 21311

Patent

active

060603984

ABSTRACT:
A method and apparatus for protecting a neighboring area that is adjacent to a first area that is to be etched. The method includes creating a guard cell substantially surrounding the first area, but excluding the neighboring area. The guard cell is formed of a material that is substantially selective to the etch process subsequently employed to etch within the first area. After the guard cell is formed, an etch is performed within the first area, while the guard cell prevents etching of the neighboring are outside the guard cell.

REFERENCES:
patent: 5127990 (1992-07-01), Pribat et al.
patent: 5538924 (1996-07-01), Chen
patent: 5690841 (1997-11-01), Elderstig
patent: 5773361 (1998-06-01), Cronin et al.
patent: 5899736 (1999-05-01), Weigand et al.
Wolf,S., Silicon Processing for the VLSI Era, vol. 2--Process Integration, Lattice Press, Sunset Beach, California, 1990, pp. 35-36.

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