Growth substrate having growth nuclei made of diamonds and/or di

Details Growth substrate having growth nuclei made of diamonds and/or di Growth substrate having growth nuclei made of diamonds and/or di

1998-01-23

2000-03-14

Bowers, Charles

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

257 77, H01L 2120

Patent

active

060372400

ABSTRACT:
A growth substrate having growth nuclei made of diamond and/or diamond-like carbon arranged on its growth surface, the orientation of over 50% of the growth nuclei deviating by less than 10.degree. from the crystal orientation defined by the growth substrate corresponding to Miller's indices (h, k, l) and the nucleus density changes between the center of the growth substrate and a distance of maximally 15 mm from the center by maximally 80%. The method also relates to a process for the growth substrate's manufacture.

REFERENCES:
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patent: 5458733 (1995-10-01), Tessmer et al.
patent: 5471947 (1995-12-01), Tachibana et al.
patent: 5479875 (1996-01-01), Southworth et al.
patent: 5523160 (1996-06-01), Kobashi et al.
patent: 5562769 (1996-10-01), Dreifus et al.
patent: 5580380 (1996-12-01), Liu et al.
patent: 5592053 (1997-01-01), Fox et al.
S. Yugo et al., "Generation of diamondd nuclei by electric field im plasma chemical vapor deposition", Appl. Phys. Lett. 58 (10) pp. 1036-1038 Mar. 1991.
Appl. Phys. Lett., vol. 68, No. 25, Jun. 17, 1996, pp. 3558-3560, entitled "Nucleation of High Oriented Diamond on Silicon via an Alternating Current Substrate Bias" by Wolter, et al..

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