Radiant energy – Inspection of solids or liquids by charged particles – Methods
Patent
1988-07-15
1989-03-14
Fields, Carolyn E.
Radiant energy
Inspection of solids or liquids by charged particles
Methods
250306, 156601, 156DIG103, G01N 2100
Patent
active
048126500
ABSTRACT:
A light source with appropriate optics focusses light on the wafer surface during deposition, while a nearby collector is biased to collect photoemitted electrons from the growing surface. A pico ammeter can be used to convert the small oscillatory current detected to a substantial voltage signal which can be recorded or processed by computer or other sutiable device. The light must contain wavelengths at energies close to or greater than the energy of the photoemission threshold. The detected photoemitted electron signal has an oscillatory component occurring due to the growth of epitaxial layers. This oscillation has frequency 1/.tau., where .tau. is the monolayer accumulation time.
REFERENCES:
patent: 4096386 (1978-06-01), Rempfer et al.
patent: 4332833 (1982-06-01), Aspnes et al.
patent: 4575462 (1986-03-01), Dobson et al.
J. B. Theeten, "Analysis of a Surface Crystallography of a Solid: LEED and RHEED Techniques", Acta Electronica, 18, 1, 1975, pp. 39-45.
Eckstein James N.
Webb Christopher
Weng Shang-Lin
Cole Stanley Z.
Fields Carolyn E.
Fisher Gerald M.
Miller John A.
Varian Associates Inc.
LandOfFree
Growth rate monitor for molecular beam epitaxy does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Growth rate monitor for molecular beam epitaxy, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Growth rate monitor for molecular beam epitaxy will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-895180