Growth of thallium-doped silicon from a tin-thallium solution

Details Growth of thallium-doped silicon from a tin-thallium solution Growth of thallium-doped silicon from a tin-thallium solution

1980-04-28

1981-06-02

Bernstein, Hiram

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156 64, C30B 1902

Patent

active

042709733

ABSTRACT:
A method of growing single crystals of silicon doped with thallium for use as an extrinsic silicon photodetector of 3-5 um infrared radiation which will operate above 77 K.

REFERENCES:
patent: 2759895 (1956-08-01), Belmont
patent: 2904512 (1959-09-01), Horn
patent: 2990372 (1961-06-01), Pinter et al.
patent: 3010857 (1961-11-01), Nelson

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