Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step
Patent
1980-07-15
1981-10-06
Bernstein, Hiram
Adhesive bonding and miscellaneous chemical manufacture
Delaminating processes adapted for specified product
Delaminating in preparation for post processing recycling step
423594, 156DIG74, C30B 1904
Patent
active
042933722
ABSTRACT:
Single crystal magnetoplumbite is grown at temperatures under 1000.degree. C. from a fluxed melt having a selected concentration ratio of boron oxide to lead oxide and a selected concentration of iron oxide sufficient to cause magnetoplumbite to crystallize yet not so much iron oxide as will cause the melt's crystallization temperature to exceed 1000.degree. C.
REFERENCES:
Jonker, Journal of Crystal Growth, 28 (1975), 231-239.
Mountvala et al., Journal of the American Ceramic Society, v. 45, No. 6, pp. 285-288.
Nielson et al., J. Phys. Chem. Solids, 1958, vol. 5, pp. 202-207.
Blank et al., Journal of Crystal Growth, 17 (1972), 302-311.
Crystals for Magnetic Applications, Rooijmans-ed., Springer-Verlag, N. Y. 1978, pp. 75-78.
Bernstein Hiram
Friedman Gilbert H.
Hamann H. Fredrick
Rockwell International Corporation
LandOfFree
Growth of single-crystal magnetoplumbite does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Growth of single-crystal magnetoplumbite, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Growth of single-crystal magnetoplumbite will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1205128