Growth of single crystal bismuth silicon oxide

Details Growth of single crystal bismuth silicon oxide Growth of single crystal bismuth silicon oxide

1977-06-10

1980-02-05

Emery, S. J.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156617SP, 156624, 156DIG79, 423326, 422249, B01J 1718, C01G 2900

Patent

active

041871391

ABSTRACT:
Method of growing single crystal of bismuth silicon oxide from a melt of Bi.sub.x Si O.sub.1.5x+2, in an oxygen containing atmosphere. At the start of crystallization, x has a value of 11.55 to 11.82 or 12.35 to 14.00. The value of x does not have a spread of more than 0.025 throughout the crystal.

REFERENCES:
patent: 3418086 (1968-12-01), Loiacono
patent: 3653814 (1972-04-01), Bonner
patent: 3723599 (1973-03-01), Brandle
patent: 3883313 (1975-05-01), Cullen
Chemical Abstracts, "Rez", vol. 74, #20, 1971, p. 364, Abstract #105,156m.

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