Growth of single crystal beryllium oxide

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

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156619, 156DIG89, C30B 1514

Patent

active

042343763

ABSTRACT:
A process for rapid growth of large single crystals of beryllium oxide of a high degree of perfection is provided. The crystals are grown by top seeding in a substantially oxygen-and water vapor-free atmosphere from molten mixtures of BeO and one or more other metal oxides. Critical parameters include seed crystal orientation, rotation and pull rates and induction heating frequency. Resultant crystals are useful as substrates and windows in electronic and laser applications.

REFERENCES:
patent: 3768983 (1973-10-01), Elkins et al.
J. Crystal Growth, 42 (1977), 473-482, Hurle.

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