Growth of silicon carbide crystals on a seed while pulling silic

Details Growth of silicon carbide crystals on a seed while pulling silic Growth of silicon carbide crystals on a seed while pulling silic

1977-07-29

1979-05-01

Emery, Stephen J.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156DIG68, 423345, B01J 1720

Patent

active

041521943

ABSTRACT:
A saturated solution of silicon and an element such as carbon having a segregation coefficient less than unity is formed by placing a solid piece of carbon in a body of molten silicon having a temperature differential decreasing toward the surface. A silicon carbide seed crystal is disposed on a holder beneath the surface of the molten silicon. As a rod or ribbon of silicon is slowly pulled from the melt, a supersaturated solution of carbon in silicon is formed in the vicinity of the seed crystal. Excess carbon is emitted from the solution in the form of silicon carbide which crystallizes on the seed crystal held in the cool region of the melt.

REFERENCES:
patent: 2996415 (1961-08-01), Hergenrother
patent: 3053635 (1962-09-01), Shockley
Swartz et al., J. of Electronic Materials, vol. 4, #2, 1975, pp. 255-279.

Affiliated with

Also associated with

Rating

Growth of silicon carbide crystals on a seed while pulling silic does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Growth of silicon carbide crystals on a seed while pulling silic, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Growth of silicon carbide crystals on a seed while pulling silic will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-629628