Growth of semi-conductors and apparatus for use therein

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

156614, 148DIG25, 118719, 118729, 118730, 427 87, 4272555, C30B 2512, C23C 2800

Patent

active

046647430

ABSTRACT:
A method for the growth of a semi-conductor material on a substrate by vapour phase epitaxy, comprises establishing a gas flow in each of a plurality of ducts, and moving the substrate, in a single plane of movement, from one duct to another. Suitable apparatus for use in the method comprises a plurality of ducts; apparatus for establishing a gas flow along each duct; a substrate support member, on which there may be a groove for the location of a substrate; and apparatus for moving, e.g. rotating, the support member. In use, the substrate is exposed sequentially to at least two of the gas flows, e.g. to grow GaInAs on InP.

REFERENCES:
patent: 3424629 (1969-01-01), Ernst et al.
patent: 3473510 (1969-10-01), Sheng et al.
patent: 3637434 (1972-01-01), Nakanuma et al.
patent: 3785853 (1974-01-01), Kirkman et al.
patent: 4058430 (1977-11-01), Suntola et al.
patent: 4261808 (1981-04-01), Walter
patent: 4468283 (1984-08-01), Ahmed
"A Simplified Technique for MOCVD of III-V Compounds" by A. K. Chatterjee et al., Journal De Physique, vol. 43, pp. C5-491 to 503 (Dec. 1982).
"Metallo-Organic Compounds" by Rodney H. Moss, Chemistry in Britain, pp. 733-737 (Sep. 1983).
"Insuring Consistent Doping Levels of Epitaxial Layers Grown on Batches of Wafers" by R. L. Bratter and A. K. Gaind-IBM Technical Disclosure Bulltein, vol. 15, No. 11, pp. 3550-3551, Apr. 1973.
"A New Technique for Vapor Phase Multilayer Epitaxy of III-V Compound Semiconductors" by M. Yoshida et al., Abstract 207, 152nd Electrochemical Society Meeting, Seattle, Washington Electrochemical Society (1978).
"A New Approach to MOCVD of Indium Phosphide and Gallium-Indium Arsenide" by R. H. Moss and J. S. Evans, Journal of Crystal Growth, vol. 55, pp. 129-134 (1981).
"Hydride Multi-barrel Reactors Suitable for Microwave and Optoelectronic (Ga, In) (As, P) Heterostructure Growth", by G. Beuchet et al., Journal of Crystal Growth, vol. 57, pp. 379-386 (1982).
"Low Pressure-MOCVD Growth of GaInAs-InP Heterojunction and Superlattices" by M. Razeghi et al., J. Vac. Sci. Technol., vol. 1, No. 2, Apr.-Jun. 1983.
"MOVPE-Current Status for Optoelectronic Applications" by R. H. Moss et al., British Telecon Technologies Journal, vol. 2, No. 4, Sep. 1984.
"Crystal Growth and Properties of Binary, Ternary and Quaternary (In, Ga) (As, P) Alloys Grown by the Hydride Vapour-phase Epitaxy Technique" by G. H. Olsen and T. J. Zamerowski, Prog. Crystal Growth Charact., vol. 2, pp. 309-375 (1979).

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Growth of semi-conductors and apparatus for use therein does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Growth of semi-conductors and apparatus for use therein, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Growth of semi-conductors and apparatus for use therein will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1800258

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.