Growth of oxide thin films using solid oxygen sources

Details Growth of oxide thin films using solid oxygen sources Growth of oxide thin films using solid oxygen sources

1984-03-02

1986-06-03

Childs, Sadie L.

Coating processes

Electrical product produced

Condenser or capacitor

4271263, 427255, 4272553, C23C 1640

Patent

active

045929270

ABSTRACT:
Oxide (R.sub.m O.sub.n) films are grown by evaporation from separate sources of element (R) and an oxide (M.sub.r O.sub.s) which serves as the oxygen source. The oxide (M.sub.r O.sub.s) should sublimate congruently; i.e., without decomposing into oxygen and its constituent element (M). On the growth surface this oxide (M.sub.r O.sub.s) can react with the element (R) to form another oxide (R.sub.m O.sub.n) that is thermodynamically more stable:

REFERENCES:
patent: 4199383 (1980-04-01), Wittry
patent: 4374160 (1983-02-01), Yoshioka et al.
Grant et al., "GaAs Surface Passivation for Device Applications", Tech. Report AFWAL-TR-80-1104, pp. 1-26, Jul. 1980.
Cho et al., "Molecular Beam Epitaxy", Progress in Solid-State Chemistry, vol. 10, Part 3, pp. 157-191, 1975.

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