Growth of oriented single crystal semiconductor on insulator

Details Growth of oriented single crystal semiconductor on insulator Growth of oriented single crystal semiconductor on insulator

1983-09-12

1984-04-24

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156603, 156612, 156647, 1566591, 156662, 156DIG64, 156DIG65, 156DIG70, 156DIG111, 427 86, B05D 512, B44C 122, C03C 1500, H01L 21306

Patent

active

044446209

ABSTRACT:
Improvements in the lateral recrystallization of semiconductor material on buried insulator are disclosed. In particular, in the zone-melting process applied to seeded Si, it is found that scanning the molten zone in a [110] direction can result in substantially subboundary-free recrystallized material. Furthermore, appropriate patterning of the capping layer, to provide means for accommodating the volume change attending solidification of the semiconductor material, can result in significant decrease of defect density in laterally recrystallized semiconductor material on insulator. Especially advantageous results are produced when combining the improvements.

REFERENCES:
patent: 4323417 (1982-04-01), Lam
patent: 4371421 (1983-02-01), Fan
Integrated Circuit Technology, T. A. Longo, Boston Technical Publishers, Inc., 1970.
"Zone-Melting Recrystallization of Encapsulated Silicon Films on SiO.sub.2 -Morphology and Crystallography", M. W. Geis et al., Applied Physics Letters, vol. 40, No. 2, Jan. 15, 1982, pp. 158-160.
"Solidification-Front Modulation to Entrain Subboundaries in Zone-Melting Recrystallization of Si on SiO.sub.2 ", M. W. Geis et al., Journal of the Electrochemical Society, vol. 130, No. 5, May 1983, pp. 1178-1183.
"An Analysis of the Process of Recrystallization of Silicon Thin Films with Either a Scanning Laser or Strip Heater", H. E. Cline, Journal of Applied Physics, vol. 54, No. 5, May 1983, pp. 2683-2691.
"Silicon-on-Insulator for VLSI and VHSIC", VLSI Electronics Microstructure Science, H. W. Lam et al., Chapter 1, vol. 4, Academic Press, 1982, pp. 1-54, Ed. N. G. Einspruch.
"Lateral Epitaxial Growth of Thick Polysilicon Films on Oxidized 3-Inch Wafers", J. Narayan et al., Materials Research Society Symposia Proceedings, vol. 13, 1983, pp. 575-580.
"Zone-Melting Recrystallization of Si Films with a Moveable-Strip-Heater Oven", M. W. Geis et al., Journal of the Electrochemical Society, vol. 129, No. 12, Dec. 1982, pp. 2812-2818.

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