Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate
Reexamination Certificate
2008-10-27
2011-12-27
Gebremariam, Samuel (Department: 2811)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
C438S584000, C438S046000, C438S974000, C257SE21112, C257SE21121, C257SE29070, C977S721000, C977S762000, C977S815000, C977S890000, C977S949000
Reexamination Certificate
active
08084337
ABSTRACT:
The present invention relates to growth of III-V semiconductor nanowires (2) on a Si substrate (3). Controlled vertical nanowire growth is achieved by a step, to be taken prior of the growing of the nanowire, of providing group III or group V atoms to a (111) surface of the Si substrate to provide a group III or group V 5 surface termination (4). A nanostructured device comprising a plurality of aligned III-V semiconductor nanowires (2) grown on, and protruding from, a (111) surface of a Si substrate (3) in an ordered pattern in compliance with a predetermined device layout is also presented.
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Mårtensson Thomas
Ohlsson Jonas
Samuelson Lars
Svensson Patrik
Arena Andrew O.
Gebremariam Samuel
QuNano AB
The Marbury Law Group PLLC
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