Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Heterojunction formed between semiconductor materials which...
Reexamination Certificate
2004-09-23
2009-12-15
Nguyen, Dao H (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Heterojunction formed between semiconductor materials which...
Reexamination Certificate
active
07633097
ABSTRACT:
A III-nitride light emitting device is grown on a textured substrate, in order to reduce the amount of total internal reflection at the interface between the substrate and the III-nitride layers. In some embodiments, the device includes a first growth region substantially free of voids, and a second growth region that improves the material quality such that high quality layers can be grown over the first and second regions.
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Satoru Tanaka et al., “Anti-Surfactant in III-Nitride Epitaxy” -Quantum Dot Formation and Dislocation Termination-, Jpn. J. Appl.Phys., vol. 39 (2000) Pt. 2, No. 8B, Express Letter, pp. L831-L834.
Kim Andrew Y.
Maranowski Steven A.
Leiterman Rachel V.
Nguyen Dao H
Nguyen Tram H
Patent Law Group
Philips Lumileds Lighting Company LLC
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