Growth method for chalcongenide phase-change nanostructures

Details Growth method for chalcongenide phase-change nanostructures Growth method for chalcongenide phase-change nanostructures

2006-08-25

2010-02-02

Garber, Charles D (Department: 2812)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S102000, C257SE27001, C257SE27004, C257SE27114, C977S700000, C977S902000

Reexamination Certificate

active

07655497

ABSTRACT:
A method for growth of an alloy for use in a nanostructure, to provide a resulting nanostructure compound including at least one of GexTey, InxSby, InxSey, SbxTey, GaxSby, GexSby,Tez, InxSbyTez, GaxSeyTez, SnxSbyTez, InxSbyGez, GewSnxSbyTez, GewSbxSeyTez, and TewGexSbySz, where w, x, y and z are numbers consistent with oxidization states (2, 3, 4, 5, 6) of the corresponding elements. The melt temperatures for some of the resulting compounds are in a range 330-420° C., or even lower with some compounds.

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