Growing doped single crystal ceramic materials

Details Growing doped single crystal ceramic materials Growing doped single crystal ceramic materials

1977-11-28

1980-01-29

Emery, Stephen J.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156617V, 156DIG61, 156DIG63, 156DIG78, 156DIG95, 422248, B01J 1708, B01J 1720, B01J 1736

Patent

active

041860462

ABSTRACT:
An improved process for growing single crystals of ceramic material according to the gradient furnace technique is disclosed. The process combines the gradient furnace technique with principles of zone leveling and comprises seeding the melt of a ceramic material in a crucible, heating the crucible to above the melting point of the material and solidifying the material to form a single crystal by extracting heat from the bottom portion of the crucible. The application of zone leveling principles to this system comprises melting the ceramic material by creating a molten zone at the bottom portion of the crucible and passing the zone up the crucible to progressively melt successive portions of the ceramic material therein.

REFERENCES:
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patent: 2898249 (1959-08-01), Jensen
patent: 3211654 (1965-10-01), Jacob
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patent: 4096025 (1978-06-01), Caslavsky
Grodkiewicz et al., Cryst. Growth Suppl., J. of Phy. & Chem. of Solids, pp. 41-444 (1967).
Burrus et al., Applied Physics Letters, vol. 26, No. 6, Mar. 15, 1975, pp. 318-320.
Potoin et al., Crystal Growing, Northern Elec. TELESIS, pp. 274-279, vol. #9, Oct. 1970.

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