Growing crystals from a melt by controlling additions of materia

Details Growing crystals from a melt by controlling additions of materia Growing crystals from a melt by controlling additions of materia

1978-03-15

1981-02-10

Garris, Bradley

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156607, 156617SP, 156DIG64, 156DIG105, 148172, C30B 502, C30B 1504, C30B 2906

Patent

active

042499887

ABSTRACT:
Specially selected particles 32 of an irregularly shaped material are almost completely melted in a heated crucible 22. Then while a small upper portion of the material 32 is still partially solid, additional but smaller particles 38 of a material are added thereon. Another method also starts with the specially selected particles 32 of a material which are completely melted in the heated crucible 22. Then the top surface of the liquid is partially frozen into a structural layer 36 to receive the addition of the smaller particles 38. Both techniques substantially prevent extremely hot liquid which is dangerously reactive from being scattered outside the crucible 22 when additional material 38 is added therein. Finally the entire contents of the crucible 22 are melted and a single-crystalline ingot 48 is grown from a melt 34.

REFERENCES:
patent: 2994593 (1961-08-01), Sullivan
patent: 3679370 (1972-07-01), Czeck et al.
patent: 3899304 (1975-08-01), Linares
patent: 3966445 (1976-06-01), Adams
"Apparatus for Injecting Controlled Amounts of Material into a Hot Crystal Grower," W. Elec. Tech. Dig.

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