Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction
Patent
1998-02-12
2000-03-28
Chaudhuri, Olik
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With heterojunction
257 76, 257 97, H01L 3300
Patent
active
060435143
ABSTRACT:
A group III-V type nitride semiconductor device includes a substrate with a crystal structure of rutile type, CaC.sub.2 type, rock salt type, spinel type, NaFeO.sub.2 (II) type or LiAlO.sub.2 (I) type, and a nitride semiconductor layer epitaxially grown thereon. The substrate is selected so that its lattice constant allows good lattice match with respect to the nitride semiconductor layer, or the substrate is adjusted in composition to have such a lattice constant.
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patent: 5625202 (1997-04-01), Chai
patent: 5716450 (1998-02-01), Togawa et al.
Nicholls et al., "Growth and Optical Properties of GaN Grown by MBE on Novel Lattice-Matched Oxide Substrates", Mat. Res, Soc. Symp. Proc. (1996) 395:535-539.
Nakamura et al., "InGaN Multi-Quantum-Well Structure Laser Diodes Grown on MgAI.sub.2 O.sub.4 Substrates", Appl. Phys. Lett. (Apr. 1996) 15(68):2105-2107.
Chaudhuri Olik
Sharp Kabushiki Kaisha
Wille Douglas A.
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