Group III-V type nitride compound semiconductor light-emitting d

Details Group III-V type nitride compound semiconductor light-emitting d Group III-V type nitride compound semiconductor light-emitting d

1997-12-08

1999-06-29

Tran, Minh Loan

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

257 94, 257103, H01L 2906, H01L 3300

Patent

active

059171960

ABSTRACT:
A group III-V type nitride compound semiconductor light-emitting device employing compound semiconductors the lattices of which are matched to each other and having a large band discontinuity value between the semiconductor layers is characterized in that it is a light-emitting device obtained by junction of a barrier layer and an active layer and that the active layer contains Nb. The present invention provides a group III-V type nitride compound semiconductor light-emitting device which has low threshold current and low threshold voltage characteristics.

REFERENCES:
Nakamura et al., "InGaN-Based Multi-Quantum-Well-Structure Laser Diodes" Jpn. J. Appl. Phys. (1996) 35:L74-L76.

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