Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Compound semiconductor
Reexamination Certificate
2011-07-19
2011-07-19
Smith, Matthew (Department: 2823)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Compound semiconductor
C257SE21090
Reexamination Certificate
active
07981713
ABSTRACT:
A group III-V nitride-based semiconductor substrate has: a first layer made of GaN single crystal; and a second layer formed on the first layer, the second layer made of group III-V nitride-based semiconductor single crystal represented by AlxGa1-xN, where 0.9<x≦1, wherein a top surface and a back surface of the substrate are flattened.
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Foley & Lardner LLP
Hitachi Cable Ltd.
Smith Matthew
Swanson Walter H
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