Group III-V heterostructure devices having self-aligned graded c

Details Group III-V heterostructure devices having self-aligned graded c Group III-V heterostructure devices having self-aligned graded c

1991-07-03

1992-11-10

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

257185, 257191, 257458, 257609, H01L 2912, H01L 29167, H01L 29161, H01L 2714

Patent

active

051628910

ABSTRACT:
A lateral injection group III-V heterostructure device having self-aligned graded contact diffusion regions of opposite conductivity types and a method of fabricating such devices are disclosed. The device includes a heterojunction formed by a higher bandgap III-V compound semiconductor formed over a lower bandgap III-V compound semiconductor. The method of the present invention allows the opposite conductivity type diffusion regions to diffuse simultaneously and penetrate the heterojunction. This results in compositional mixing of the compound semiconductor materials forming the heterojunction in the diffusion regions.

REFERENCES:
patent: 4540446 (1985-09-01), Nonaka et al.
patent: 4593307 (1986-06-01), Rupprecht et al.
patent: 4843033 (1989-06-01), Plumton et al.
patent: 5027187 (1991-06-01), O'Mara, Jr. et al.
patent: 5032884 (1991-07-01), Yamagishi et al.

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