Group III-V crystal

Details Group III-V crystal Group III-V crystal

2007-10-12

2009-02-03

Le, Thao P. (Department: 2818)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Groove formation

C438S604000

Reexamination Certificate

active

07485484

ABSTRACT:
Favorable-quality III-V crystals are easily obtained at low cost without causing cracks, even when using a variety of substrates. The III-V crystals are obtained by manufacturing method characterized in including: a step of depositing a metal film (2) on a substrate (1); a step of heat-treating the metal film (2) in an atmosphere in which a patterning compound is present; and a step of growing a group III-V crystal (4) on the metal film after the heat treatment. Alternatively, the III-V crystal manufacturing method is characterized in including: a step of growing a group III-V compound buffer film on the metal film after the heat treatment; and a step of growing a group III-V crystal on the group III-V compound buffer film.

REFERENCES:
patent: 6809351 (2004-10-01), Kuramoto et al.
patent: 6812051 (2004-11-01), Usui et al.
patent: 1387231 (2002-12-01), None
patent: 1271627 (2003-01-01), None
patent: 2000-063123 (2000-02-01), None
patent: 2001-057369 (2001-02-01), None
patent: 2002-261140 (2002-09-01), None
patent: 2002-324851 (2002-11-01), None

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