Group III nitride substrate, epitaxial layer-provided...

Details Group III nitride substrate, epitaxial layer-provided... Group III nitride substrate, epitaxial layer-provided...

2011-03-08

2011-03-08

Arora, Ajay K (Department: 2892)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

C438S037000, C257S097000, C257S102000, C257S103000

Reexamination Certificate

active

07901960

ABSTRACT:
A group III nitride substrate on which an epitaxially grown layer of good quality can be formed, and a method of manufacturing the same are obtained. A GaN substrate is one of the following: a group III nitride substrate, wherein the number of atoms of an acid material per square centimeter of a surface is not more than 2×1014, and the number of silicon atoms per square centimeter of the surface is not more than 3×1013; a group III nitride substrate, wherein the number of silicon atoms per square centimeter of a surface is not more than 3×1013, and a haze level of the surface is not more than 5 ppm; and a group III nitride substrate, wherein the number of atoms of an acid, material per square centimeter of a surface is not more than 2×1014, and a haze level of the surface is not more than 5 ppm.

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