Coherent light generators – Particular active media – Semiconductor
Reexamination Certificate
2011-04-26
2011-04-26
Harvey, Minsun (Department: 2828)
Coherent light generators
Particular active media
Semiconductor
C372S043010, C372S044010
Reexamination Certificate
active
07933303
ABSTRACT:
Provided is a group-III nitride semiconductor laser device with a laser cavity allowing for a low threshold current, on a semipolar surface of a support base in which the c-axis of a hexagonal group-III nitride is tilted toward the m-axis. First and second fractured faces27, 29to form the laser cavity intersect with an m-n plane. The group-III nitride semiconductor laser device11has a laser waveguide extending in a direction of an intersecting line between the m-n plane and the semipolar surface17a. For this reason, it is feasible to make use of emission by a band transition enabling the low threshold current. In a laser structure13, a first surface13ais opposite to a second surface13b. The first and second fractured faces27, 29extend from an edge13cof the first surface13ato an edge13dof the second surface13b. The fractured faces are not formed by dry etching and are different from conventionally-employed cleaved facets such as c-planes, m-planes, or a-planes.
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Adachi Masahiro
Akita Katsushi
Enya Yohei
Ikegami Takatoshi
Katayama Koji
Harvey Minsun
King Joshua
Sartori Michael A.
Sumitomo Electric Industries Ltd.
Thelen Leigh D.
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