Group III nitride semiconductor laser

Details Group III nitride semiconductor laser Group III nitride semiconductor laser

2011-05-24

2011-05-24

Harvey, Minsun (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S045010, C372S039000

Reexamination Certificate

active

07949026

ABSTRACT:
A group III nitride semiconductor laser is provided that has a good optical confinement property and includes an InGaN well layer having good crystal quality.An active layer19is provided between a first optical guiding layer21and a second optical guiding layer23. The active layer19can include well layers27a,27b, and27cand further includes at least one first barrier layer29aprovided between the well layers. The first and second optical guiding layers21and23respectively include first and second InGaN regions21aand23asmaller than the band gap E29of the first barrier layer29a, and hence the average refractive index nGUIDEof the first and second optical guiding layers21and23can be made larger than the refractive index n29of the first barrier layer29a. Thus, good optical confinement is achieved. The band gap E29of the first barrier layer29ais larger than the band gaps E21and E23of the first and second InGaN regions21aand23a.

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