Group-III nitride epitaxial layer on silicon substrate

Details Group-III nitride epitaxial layer on silicon substrate Group-III nitride epitaxial layer on silicon substrate

2008-05-27

2011-10-04

Tran, Thien F (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

C257S103000, C257SE33025

Reexamination Certificate

active

08030666

ABSTRACT:
A semiconductor device includes a silicon substrate; silicon faceted structures formed on a top surface of the silicon substrate; and a group-III nitride layer over the silicon faceted structures. The silicon faceted structures are separated from each other, and have a repeated pattern.

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patent: 2002/0069816 (2002-06-01), Gehrke et al.
Lee, S.C., et al., “NanoScale Spatial Phase Modulation of GaN on a V-Grooved Si Substrate—Cubic Phase GaN on Si(001) for Monolithic Integration,” IEEE Journal of Quantum Electronics, vol. 41, No. 4, Apr. 2005, pp. 596-605. IEEE.

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