Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-03-28
2006-03-28
Kang, Donghee (Department: 2811)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S046000, C438S047000, C438S604000, C257S099000, C257S744000, C257S745000
Reexamination Certificate
active
07018915
ABSTRACT:
An AlN buffer layer2; a silicon (Si)-doped GaN high-carrier-concentration n+layer3; an Si-doped n-type Al0.07Ga0.93N n-cladding layer4; an Si-doped n-type GaN n-guide layer5; an active layer6having a multiple quantum well (MQW) structure, and including a Ga0.9In0.1N well layer61(thickness: about 2 nm) and a Ga0.97In0.03N barrier layer62(thickness: about 4 nm), the layers61and62being laminated alternately; an Mg-doped GaN p-guide layer7; an Mg-doped Al0.07Ga0.93N p-cladding layer8; and an Mg-doped GaN p-contact layer9are successively formed on a sapphire substrate. A p-electrode10is formed of a film of titanium nitride (TiN) or tantalum nitride (TaN) (thickness: 50 nm). The contact resistance of this electrode is reduced through heat treatment.
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Asai Makoto
Koide Yasuo
Murakami Masanori
Shibata Naoki
Uemura Toshiya
Kang Donghee
McGinn IP Law Group PLLC
Toyoda Gosei Co,., Ltd.
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