Group III nitride compound semiconductor device

Details Group III nitride compound semiconductor device Group III nitride compound semiconductor device

2005-05-24

2005-05-24

Smith, Matthew (Department: 2825)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S020000, C438S022000, C438S040000, C438S043000, C438S046000, C438S478000, C257S010000, C257S013000, C257S079000, C257S292000, C257S293000, C257S918000

Reexamination Certificate

active

06897139

ABSTRACT:
A titanium layer and a titanium nitride layer are successively laminated on a substrate and a group III nitride compound semiconductor layer is further formed thereon. When the titanium layer is removed in the condition that a sufficient film thickness is given to the titanium nitride layer, a device having the titanium nitride layer as a substrate is obtained.

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