Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-05-24
2005-05-24
Smith, Matthew (Department: 2825)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S020000, C438S022000, C438S040000, C438S043000, C438S046000, C438S478000, C257S010000, C257S013000, C257S079000, C257S292000, C257S293000, C257S918000
Reexamination Certificate
active
06897139
ABSTRACT:
A titanium layer and a titanium nitride layer are successively laminated on a substrate and a group III nitride compound semiconductor layer is further formed thereon. When the titanium layer is removed in the condition that a sufficient film thickness is given to the titanium nitride layer, a device having the titanium nitride layer as a substrate is obtained.
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Senda Masanobu
Shibata Naoki
Lee, Jr. Granvill D.
Smith Matthew
Toyoda Gosei Co,., Ltd.
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