Grooved wiring structure in semiconductor device and method for

Details Grooved wiring structure in semiconductor device and method for Grooved wiring structure in semiconductor device and method for

1997-06-03

2000-08-08

Booth, Richard

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438637, 438638, H01L 214763

Patent

active

061001775

ABSTRACT:
In a semiconductor device comprising a first level insulator film formed on a silicon substrate, a first level wiring conductor formed on the first level insulator film, and a second level insulator film formed to cover the first level wiring conductor and the first level insulator film, openings are formed in the second level insulator film, and second level wiring conductors are formed to fill up the openings. The openings including a through-hole type opening and at least two groove type openings having different depths, and the through-hole type opening extends through one of the at least two groove type openings to reach the first level wiring conductor. The grooved wiring conductors having different film thicknesses are provided in the same wiring conductor level.

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