Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1993-08-09
1995-04-18
Munson, Gene M.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257306, 257401, 257622, H01L 2978, H01L 2906
Patent
active
054081165
ABSTRACT:
A finely structured grooved gate transistor of which the threshold voltage does not decrease in spite of the small size and of which the threshold voltage of the transistor can be adjusted by shape. The shape of a groove corner of the transistor as a semiconductor device is contained in a concentric circle having a radius of curvature r.+-.L/5 (L: channel length) and the radius of curvature r, i.e., the geometric parameter has a relationship with the doping concentration as shown in FIG. 1B. Alternatively, the average (a+b)/2 (geometric parameter) of the sum of the two sides opposite the right angle of a right triangle formed of a straight line in contact with the gate bottom in parallel to the substrate surface of a grooved gate transistor, a perpendicular line to the substrate bottom surface from the source and drain ends at a portion formed with a channel and a straight line in contact with the groove corner has a relationship with the doping concentration as shown in FIG. 1B. The threshold voltage is not reduced even when the channel length is decreased by adjusting the groove shape and the doping concentration.
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"A Straight-Line-Trench Isolation and Trench-Gate Transistor (SLIT) Cell for Giga-bit DRAMs"; VLSI Symposium; Jun., 1993, pp. 19-20, M. Sakao et al.
"Trench Transistor Cell with Self-Aligned Contact (TSAC) for Megabit MOS DRAM", IEEE Int. Electron Devices Meeting, .COPYRGT.1986.
Brews, J. R., et al., "Generalized Guide for MOSFET Miniaturization," IEEE Electron Device Letters, vol. EDL-1. No. 1, Jan. 1980, pp. 2-4. (English).
Nishimatsu, Shigeru, et al., "Grooved Gate MOSFET", Japanese Journal of Applied Physics, vol. 16, 1977, pp. 179-183. (English).
Hieda, Katsuhiko, et al., "Sub-Half-Micrometer Concave MOSFET with Double LDD Structure", IEEE Transactions on Electron Devices, vol. 39, No. 3, Mar. 1992, pp. 671-676. (English).
Gotoh Yasushi
Ihara Sigeo
Itoh Kiyoo
Kimura Shin'ichiro
Noda Hiromasa
Hitachi , Ltd.
Munson Gene M.
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