Groove-type semiconductor device

Details Groove-type semiconductor device Groove-type semiconductor device

1996-05-17

1997-10-28

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257331, 257341, H01L 2976, H01L 2994, H01L 31062, H01L 31113

Patent

active

056820488

ABSTRACT:
A semiconductor structure having a plurality of drivers in and on the same semiconductor substrate is arranged to increase the density of integrated components and reduce the on resistance. The semiconductor structure employs a double layer interconnection structure having source and drain electrodes at two different levels, and an insulated gate electrode in a groove formed the semiconductor substrate. Each drain lead region having a low resistivity material extends from the upper surface of the substrate to a low resistivity buried layer. Each drain opening is surrounded by a source zone formed with a series of source holes or a long and narrow source slot, and this basic pattern is regularly repeated in a plane.

REFERENCES:
patent: 3975221 (1976-08-01), Rodgers
patent: 4438448 (1984-03-01), Harrington et al.
patent: 5034785 (1991-07-01), Blanchard
patent: 5192989 (1993-03-01), Matsushita et al.
patent: 5283454 (1994-02-01), Cambou
patent: 5352915 (1994-10-01), Hutchings et al.
patent: 5378914 (1995-01-01), Ohzu et al.

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