Grafted-crystal-film integrated optics and optoelectronic device

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

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357 19, 357 60, 357 16, 156662, 156654, 437126, 385 15, 385130, H01L 2714

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051228521

ABSTRACT:
Integrated devices, comprising an optical waveguide in a substrate, are made by attaching a crystal film to the substrate. Such films can be made by an epitaxial lift-off technique which involves epitaxial growth on an auxiliary substrate, release of a grown single- or multi-layer film from the auxiliary substrate, and transfer of the released film to its intended location where lithographic patterning can be used for the production of devices accurately positioned relative to waveguides. Electrical contacts to devices can take the form of metallic layers which further can serve to secure film edges to the substrate.

REFERENCES:
patent: 4835575 (1989-05-01), Plihal
patent: 4846931 (1989-07-01), Gmitter et al.
patent: 4883561 (1989-11-01), Gmitter et al.
Yablonovitch et al, "Double Heterostructure GaAs/AlGaAs Thin Film Diode Lasers on Glass Substrates," IEEE Photonics Technology Letters, vol. 1, No. 2, Feb. '89, 41-42.
Yablonovitch et al, "Extremes Selectivity in The Lift-Off of Epitaxial GaAs Films," Appl. Phys. Lett. 51(26), Dec. 28, 1987, pp. 2222-2224.
Yablonovitch et al, "Regrowth of GaAs Quantum Wells on GaAs Liftoff Films `van der Waals Bonded` to Silicon Substrates," Electronics Letters Jan. 19, 1989, vol. 25, No. 2, pp. 171-172.
Howard, "Structure for Optical Coupling to Thin-Semiconductor Layers," IBM Technical Disclosure Bulletin, vol. 14, No. 12, May, 1972, 3787-88.
Miura et al, "Optoelectronic Integrated AlGaAs/GaAs p-i-n/Field-Effect Transistor with an Embedded, Planar p-i-n Photodiode," Appl. Phys. Lett. 48(21), May 26, 1986, pp. 1461-1462.
Tracy et al, "Gratings for Integrated Optics by Electron Lithography," Applied Optics, Jul. 1974, vol. 13, No. 7, pp. 1695-1702.

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