Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2003-04-28
2008-12-16
Smith, Bradley K (Department: 2894)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S655000
Reexamination Certificate
active
07465660
ABSTRACT:
A silicide having variable internal metal concentration tuned to surface conditions at the interface between the silicide and adjoining layers is employed within an integrated circuit. Higher silicon/metal (silicon-rich) ratios are employed near the interfaces to adjoining layers to reduce lattice mismatch with underlying polysilicon or overlying oxide, thereby reducing stress and the likelihood of delamination. A lower silicon/metal ratio is employed within an internal region of the silicide, reducing resistivity. The variable silicon/metal ratio is achieved by controlling reactant gas concentrations or flow rates during deposition of the silicide. Thinner silicides with less likelihood of delamination or metal oxidation may thus be formed.
REFERENCES:
patent: 4954852 (1990-09-01), Lemnios
patent: 5635765 (1997-06-01), Larson
patent: 5654219 (1997-08-01), Huber
patent: 5863393 (1999-01-01), Hu
patent: 5907784 (1999-05-01), Larson
patent: 6087254 (2000-07-01), Pan et al.
patent: 6103607 (2000-08-01), Kizilayali et al.
patent: 6153452 (2000-11-01), Merchant et al.
patent: 6214711 (2001-04-01), Hu
patent: 6331460 (2001-12-01), Kizilyalli et al.
patent: 198 40 236 A 1 (1999-07-01), None
patent: 0 785 574 (1997-07-01), None
patent: 10303144 (1998-11-01), None
Fang Ming
Wang Fuchao
Jorgenson Lisa K.
Munck William A.
Smith Bradley K
STMicroelectronics Inc.
LandOfFree
Graded/stepped silicide process to improve MOS transistor does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Graded/stepped silicide process to improve MOS transistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Graded/stepped silicide process to improve MOS transistor will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4034398