Graded/stepped silicide process to improve MOS transistor

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S655000

Reexamination Certificate

active

07465660

ABSTRACT:
A silicide having variable internal metal concentration tuned to surface conditions at the interface between the silicide and adjoining layers is employed within an integrated circuit. Higher silicon/metal (silicon-rich) ratios are employed near the interfaces to adjoining layers to reduce lattice mismatch with underlying polysilicon or overlying oxide, thereby reducing stress and the likelihood of delamination. A lower silicon/metal ratio is employed within an internal region of the silicide, reducing resistivity. The variable silicon/metal ratio is achieved by controlling reactant gas concentrations or flow rates during deposition of the silicide. Thinner silicides with less likelihood of delamination or metal oxidation may thus be formed.

REFERENCES:
patent: 4954852 (1990-09-01), Lemnios
patent: 5635765 (1997-06-01), Larson
patent: 5654219 (1997-08-01), Huber
patent: 5863393 (1999-01-01), Hu
patent: 5907784 (1999-05-01), Larson
patent: 6087254 (2000-07-01), Pan et al.
patent: 6103607 (2000-08-01), Kizilayali et al.
patent: 6153452 (2000-11-01), Merchant et al.
patent: 6214711 (2001-04-01), Hu
patent: 6331460 (2001-12-01), Kizilyalli et al.
patent: 198 40 236 A 1 (1999-07-01), None
patent: 0 785 574 (1997-07-01), None
patent: 10303144 (1998-11-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Graded/stepped silicide process to improve MOS transistor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Graded/stepped silicide process to improve MOS transistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Graded/stepped silicide process to improve MOS transistor will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4034398

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.