Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2007-07-10
2007-07-10
Lebentritt, Michael (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S508000, C438S508000, C257SE21093, C257SE21561
Reexamination Certificate
active
10919952
ABSTRACT:
A process for forming a semiconductor device. The process includes forming a template layer for forming a layer of strained silicon. In one example a layer of graded silicon germanium is formed where the germanium is at a higher concentration at the lower portion and at a lower concentration at a top portion. When subject to a condensation process, the germanium of the top portion of the layer diffuses to a remaining portion of the silicon germanium layer. Because the silicon germanium layer has a higher concentration of germanium at lower portions, germanium pile up after condensation may be reduced at the upper portion of the remaining portion of the silicon germanium layer.
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Barr Alexander L.
Liu Chun-Li
Nguyen Bich-Yen
Sadaka Mariam G.
Thean Voon-Yew
Balconi-Lamica Michael
Dolezal David G.
Freescale Semiconductor Inc.
Isaac Stanetta
Lebentritt Michael
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