Graded implantation of oxygen and/or nitrogen constituents to de

Details Graded implantation of oxygen and/or nitrogen constituents to de Graded implantation of oxygen and/or nitrogen constituents to de

1994-11-10

1996-05-07

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257611, 257617, 257639, 257649, H01L 2701, H01L 2176, H01L 21265

Patent

active

055148972

ABSTRACT:
A graduated concentration profile is used for defining a buried isolation region in a semiconductor device. Smaller concentrations of dielectric-defining particles are used for implantation at the deepest levels of the isolation region in order to reduce the defect density in an overlying epi layer.

REFERENCES:
patent: 4510671 (1985-04-01), Kurtz et al.
patent: 4749660 (1988-06-01), Short et al.

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