Graded high germanium compound films for strained...

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer

Reexamination Certificate

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C438S173000

Reexamination Certificate

active

07902009

ABSTRACT:
Embodiments of an apparatus and methods for providing a graded high germanium compound region are generally described herein. Other embodiments may be described and claimed.

REFERENCES:
patent: 7348232 (2008-03-01), Chidambaram et al.
patent: 2004/0087117 (2004-05-01), Leitz et al.
patent: 2006/0113542 (2006-06-01), Isaacson et al.
patent: 2007/0235802 (2007-10-01), Chong et al.
patent: 2008/0073723 (2008-03-01), Rachmady
patent: 2008/0242037 (2008-10-01), Sell
patent: 2009/0075029 (2009-03-01), Thomas et al.
patent: 2010/068530 (2010-06-01), None
International Search Report/Witten Opinion for Patent Application No. PCT/US2009/066334, mailed Jun. 22, 2010, 11 pages.

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